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Producing Hexaferrite Single Crystal Films

IP.com Disclosure Number: IPCOM000073874D
Original Publication Date: 1971-Feb-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Giess, EA: AUTHOR [+3]

Abstract

Magnetic bubble domain devices require materials which have high bit density and high bubble domain mobility. Hexagonal ferrites appear to be very suitable, since they have these properties and further have natural uniaxial crystalline anisotropy and tend to grow as single crystal (001) plates.

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Producing Hexaferrite Single Crystal Films

Magnetic bubble domain devices require materials which have high bit density and high bubble domain mobility. Hexagonal ferrites appear to be very suitable, since they have these properties and further have natural uniaxial crystalline anisotropy and tend to grow as single crystal (001) plates.

Single crystal (001) hexagonal ferrite films are epitaxially grown on single- crystal substrates such as Al(2)O(3) (001), MgO (111), MgAl(2)O(4) (111), and Y(3)Al(5)O(12) (111). For instance, BaFe(8)Ga(4)O(19) hexagonal ferrite films can be R F sputtered on an Al(2)O(3) (001) single-crystal substrate and subsequently annealed at elevated temperatures in air or oxygen to produce
(001) epitaxial hexagonal ferrite films which are several microns thick and firmly bonded to the substrates.

Hexagonal ferrite films can also be sputtered onto heated BaFe(12)O(19)
(0001) crystal substrates to directly produce single-crystal epitaxial films. In addition, chemical vapor deposition or thermal evaporation techniques can be used to deposit these films on various substrates.

Co-additions to the films reduce magnetic anisotropy thereby reducing 4 Pi M(s). Useful additions are Sr, Pb, Ga, Al, Co and Ti.

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