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Microwave Oscillators Using Semiconductor Alloys

IP.com Disclosure Number: IPCOM000073890D
Original Publication Date: 1971-Feb-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Lorenz, MR: AUTHOR [+2]

Abstract

Improved semiconductor bulk effect devices are provided which exhibit low-threshold fields, high mobility for conduction band electrons in the low-energy conduction valley and low mobility of electrons in the high-energy conduction band valleys. Of equal importance, these and other parameters can be tailored to meet the requirements of the particular application and mode of operations from each device. The device may be prepared from alloys selected from the group consisting of Al(x) In(1-x) Sb, InP(x) Sb(1-x) , InP(x) As(1-x), Ga(x) In(1-x) As and Al(x) In(1-x) As.

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Microwave Oscillators Using Semiconductor Alloys

Improved semiconductor bulk effect devices are provided which exhibit low- threshold fields, high mobility for conduction band electrons in the low-energy conduction valley and low mobility of electrons in the high-energy conduction band valleys. Of equal importance, these and other parameters can be tailored to meet the requirements of the particular application and mode of operations from each device. The device may be prepared from alloys selected from the group consisting of Al(x) In(1-x) Sb, InP(x) Sb(1-x) , InP(x) As(1-x), Ga(x) In(1-x) As and Al(x) In(1-x) As.

The Gunn oscillator includes a semiconductor body connected to a load and a voltage supply. The useful semiconductor has to exhibit a bulk negative conductivity due to intervalley transfer at room temperature. The device may be prepared from the alloys Al(x) In(1-x) Sb, InP(x) Sb(1-x), InP(x) Sb(1-x) , InP(x) As(1-x) , Ga(x) In(1-x) As and Al(x) in(1-x) As. By choice of the proper alloy and furthermore the proper composition range, devices with optimized physical properties can be tailored to meet the requirements of the particular application.

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