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EuO Film Fabrication

IP.com Disclosure Number: IPCOM000073910D
Original Publication Date: 1971-Feb-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 2 page(s) / 35K

Publishing Venue

IBM

Related People

Ahn, KY: AUTHOR

Abstract

An apparatus for direct evaporation of Eu onto a substrate in the presence of an oxygen environment to produce EuO films is shown. This method and apparatus eliminates the need for multisource (Eu metal and Eu(2)O(3)) co-evaporation to produce such films. The apparatus is an ultrahigh vacuum system 1 which has an ultimate vacuum of 1x10(-9) Torr. The background pressure of the evaporator is raised to 8x10/-6/Torr of oxygen while Eu metal is being evaporated from a tall crucible. In particular, a Mo crucible is placed in a tantalum heater. The temperature of the crucible is between 880 and 900 degrees C. In this temperature range, the vapor pressure of Eu is considerably higher than the background pressure.

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EuO Film Fabrication

An apparatus for direct evaporation of Eu onto a substrate in the presence of an oxygen environment to produce EuO films is shown. This method and apparatus eliminates the need for multisource (Eu metal and Eu(2)O(3)) co- evaporation to produce such films. The apparatus is an ultrahigh vacuum system 1 which has an ultimate vacuum of 1x10(-9) Torr. The background pressure of the evaporator is raised to 8x10/-6/Torr of oxygen while Eu metal is being evaporated from a tall crucible. In particular, a Mo crucible is placed in a tantalum heater. The temperature of the crucible is between 880 and 900 degrees C. In this temperature range, the vapor pressure of Eu is considerably higher than the background pressure.

The substrates are heated to approximately 300 degrees C by radiant heaters, and oxygen is introduced near the substrates through an oxygen feeder and leak holes. These leak holes are located approximately one inch below the substrates. The actual pressure surrounding the substrates is somewhat higher than 10/-5/ Torr, and the evaporation rates are between 12 and 15 angstroms/sec. EuO films prepared at this deposition rate and at these pressure ranges exhibit optical absorption at 6000 Angstroms with an absorption coefficient of approximately 10/5/cm, which is similar to pure EuO films prepared by other methods.

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