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A Writeable Magnet Bubble Domain Read Only Store Cell

IP.com Disclosure Number: IPCOM000073931D
Original Publication Date: 1971-Feb-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 2 page(s) / 34K

Publishing Venue

IBM

Related People

Levi, R: AUTHOR [+2]

Abstract

This metallization pattern functions as a magnetic bubble read-only storage into which data can be written and made nonvolatile by using a permanent magnetic bias field.

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A Writeable Magnet Bubble Domain Read Only Store Cell

This metallization pattern functions as a magnetic bubble read-only storage into which data can be written and made nonvolatile by using a permanent magnetic bias field.

To write data into a word line of this cell, a bubble source 10 and associated splitter 12 are used to insert a bubble into each of the bit positions of the illustrated word line in which a "1" is stored. If a "0" is stored no bubble is placed in the bit position.

If a 1 is stored a bubble is placed into the bit position by drifting the bubble from the source 10 down the word line to the bit position.

Each cell consists of two storage positions 14 and 16, a splitter 18 and a sensing position 20. The bubble is always stored in the second storage position 16. The first storage position 14 is needed only to provide adequate domain spacing during the read operation. When the data in the word line is ready to be read, the word phase line current Io is brought up shifting the bubble from the second position into the bubble splitter 18. The word splitting current Is is then applied to separate this bubble into two parts and the phase current Io is then reversed so that part of the bubble goes to the sensing position 20 and the remaining part goes back to the storage position
16. The expansion current Ie is then brought up and expands the bubble to fill the expanding contour. The sense line expansion current Ie is thereafter reversed and the bubble is...