Browse Prior Art Database

Detecting Insulator Surface Charge

IP.com Disclosure Number: IPCOM000073984D
Original Publication Date: 1971-Feb-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Evrenidis, P: AUTHOR [+2]

Abstract

This method allows the testing of insulators overlying semiconductor bodies used in semiconductor processing, for the presence of contaminated charged species.

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Detecting Insulator Surface Charge

This method allows the testing of insulators overlying semiconductor bodies used in semiconductor processing, for the presence of contaminated charged species.

The electrode structure shown relies on the phenomenon that the deep inversion capacitance of an MOS capacitor increases when the surface of the oxide adjacent to the electrode is contaminated with a charged species. Electrode patterns 1 and 2 are deposited on the surface of the oxide to be tested. An electrical stress is applied between electrodes 1 and 2 in order to cause mobile ions in the insulator to migrate toward electrode 1. After the stress is removed the capacitance of electrode 1, relative to the semiconductor body is measured. The structure is most sensitive when the oxide is as thin as possible and the area of the stressed oxide is greater than the area or measuring electrode 1.

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