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Elimination of Protective Diodes

IP.com Disclosure Number: IPCOM000074011D
Original Publication Date: 1971-Mar-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 2 page(s) / 34K

Publishing Venue

IBM

Related People

Evrenidis, P: AUTHOR [+3]

Abstract

In present MOS technology, protective diodes are utilized to prevent electrostatic damage to oxide layers. This protection is particularly required during the application of protective coatings, such as quartz, by sputtering. This method of locating the diodes allows for their automatic elimination when chips are separated during dicing.

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Elimination of Protective Diodes

In present MOS technology, protective diodes are utilized to prevent electrostatic damage to oxide layers. This protection is particularly required during the application of protective coatings, such as quartz, by sputtering. This method of locating the diodes allows for their automatic elimination when chips are separated during dicing.

Semiconductor wafer 1 contains a plurality of chips 2 upon which active devices Q are formed. Provided in the kerf 3 between chips 2 and connected by conductive line 4, is protective diode D. Line 4 also connects input pad 5 to device Q. After diode D has served its purpose during application of a protective coating, the wafers are diced, in the ordinary manner, producing separation lines 6 which effectively eliminate diodes D by cutting line 4 in kerf 3.

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