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Liquid Phase Epitaxy Growth of Ternary IIIV Alloys

IP.com Disclosure Number: IPCOM000074054D
Original Publication Date: 1971-Mar-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 2 page(s) / 45K

Publishing Venue

IBM

Related People

Blum, JM: AUTHOR [+3]

Abstract

An apparatus for smooth uniform liquid phase epitaxy growth is provided. The apparatus avoids the need for the addition of oxidized solids to hot liquid phase epitaxial melts during the growth of epitaxial layers in order to produce compositional changes. This avoidance is made possible by the metering of small discrete amounts of oxide free liquid metals or alloys, maintained at the same temperature of the liquid phase epitaxial melt. This enables the continuous change of a band-gap of a III-V ternary semiconductor using the liquid phase epitaxial process.

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Liquid Phase Epitaxy Growth of Ternary IIIV Alloys

An apparatus for smooth uniform liquid phase epitaxy growth is provided. The apparatus avoids the need for the addition of oxidized solids to hot liquid phase epitaxial melts during the growth of epitaxial layers in order to produce compositional changes. This avoidance is made possible by the metering of small discrete amounts of oxide free liquid metals or alloys, maintained at the same temperature of the liquid phase epitaxial melt. This enables the continuous change of a band-gap of a III-V ternary semiconductor using the liquid phase epitaxial process.

In the drawing, liquid phase epitaxial growth of aluminum gallium arsenide is illustrated. A melt 1 comprising gallium, aluminum, gallium arsenide, and tellurium as a dopant is disposed in chamber 2. When additions of aluminum are required, a rotatable carbon rod 3, mounted in apparatus 10, is provided with a passage 4 to allow aluminum/gallium liquid 5 disposed in chamber 6 to pass into chamber 2 where the liquid phase epitaxy growth process is taking place on a gallium arsenide substrate 7. The liquid aluminum/gallium 5 in chamber 6 is maintained under pressure by a hollow carbon plunger 8 which is filled with a heavy tungsten weight. As rod 3 is rotated the aluminum/gallium liquid 5, under pressure of the weight, will pass into chamber 2 when passage 4 is aligned with passages 9 and 10 in the walls of chambers 2 and 6, respectively. The amount of aluminum a...