Browse Prior Art Database

Backdropped Array Technology

IP.com Disclosure Number: IPCOM000074073D
Original Publication Date: 1971-Mar-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 2 page(s) / 36K

Publishing Venue

IBM

Related People

Tsui, F: AUTHOR

Abstract

The MTL (Merged Transistor Logic) using solid state configurations with lateral and vertical transistors, one of which is inversely operated, allows considerable savings in chip area by eliminating the need for isolation regions and for isolation regions and for diffused resistors. Usually discrete (external or integrated) resistors are employed. In this arrangement buried P+regions act as common connection of the respective above situated transistor structure and one end of a resistor across the substrate material to the metallized back of the chip.

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Backdropped Array Technology

The MTL (Merged Transistor Logic) using solid state configurations with lateral and vertical transistors, one of which is inversely operated, allows considerable savings in chip area by eliminating the need for isolation regions and for isolation regions and for diffused resistors. Usually discrete (external or integrated) resistors are employed. In this arrangement buried P+regions act as common connection of the respective above situated transistor structure and one end of a resistor across the substrate material to the metallized back of the chip.

The layout of one PNP-NPN stage of an MTL circuit, shown in A, is implemented in B in backdropped array technology (BAT). Here, the PNP transistor is formed by a buried P+pocket, an N+Layer and a P+region (contacted by metallization marked IN), whereas the NPN transistor is built inversely by the N+layer and P+region and another N+region (contacted by OUT). Each resistor R is formed by the low-conductivity path within the P-substrate from the buried P+pocket to (net-patterned or continuous sheet) metallization L at the back of the substrate which, at the same time, provides decoupling of these vertical resistors.

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