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Magnetic Oxide Film Deposition

IP.com Disclosure Number: IPCOM000074144D
Original Publication Date: 1971-Mar-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Ahn, KY: AUTHOR [+2]

Abstract

Magnetic oxide films can be deposited by RF sputtering of a cathode which is a mechanical mixture of several components, rather than a bulk sample having a structure and composition similar to that of the desired thin film.

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Magnetic Oxide Film Deposition

Magnetic oxide films can be deposited by RF sputtering of a cathode which is a mechanical mixture of several components, rather than a bulk sample having a structure and composition similar to that of the desired thin film.

In particular, GdFeO(3) orthoferrite films can be prepared by RF sputtering of a cathode which is a mixture of 50% Gd(2)O(3) and Fe(2)O(3). This mixture is then subjected to hot pressing. RF sputtering in an argon pressure of 20 microns and power density of 30 watts per square inch on the substrate, which is maintained at room temperature, will produce the desired thin films. Film thicknesses of approximately 1 mil can be grown in about 12 hours. After growth, these films are annealed in air at temperatures around 900 degrees C for 15 to 20 hours.

The thin films so produced have the same composition and structure as that of bulk GdFeO(3), although such bulk materials need not be used as the starting cathode material.

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