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Improved FET Performance

IP.com Disclosure Number: IPCOM000074160D
Original Publication Date: 1971-Mar-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Terner, E: AUTHOR

Abstract

Contamination of FET's by the photoresist and processing steps is minimized by the use of a cleaning process after the application of the masks and immediately before gate regrowth and metallization.

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Improved FET Performance

Contamination of FET's by the photoresist and processing steps is minimized by the use of a cleaning process after the application of the masks and immediately before gate regrowth and metallization.

The process comprises the immersing of the FET in an 80 degree C ultrasonically agitated bath consisting of; 1 part of Ammonium Hydroxide (NH(4)OH) 1 part of Hydrogen Peroxide (H(2)O(2)) 5 parts of Water for a period of between 5 and 10 minutes,; the rinsing of the treated FET in deionized water for 5 to 10 minutes; then immersing of the washed FET in an 80 degrees C ultrasonically agitated solution consisting of; 1 part of Hydrochloric Acid (HCl) 1 part of Hydrogen Peroxide (H(2)O(2)) 5 parts of Water for 5 to 10 minutes; and a final rinse in deionized water for a period of 5 to 10 minutes.

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