Browse Prior Art Database

Manufacturing High Frequency Diodes

IP.com Disclosure Number: IPCOM000074205D
Original Publication Date: 1971-Mar-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Baitinger, U: AUTHOR [+3]

Abstract

This is a method for manufacturing a small-area metal semiconductor junction (Schottky diode) of extremely low capacity.

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Manufacturing High Frequency Diodes

This is a method for manufacturing a small-area metal semiconductor junction (Schottky diode) of extremely low capacity.

The schematic cross-sectional views show the structure at the end of essential process steps.

Isolating layer 2 is applied to a low-doped n-conductive semiconductor substrate 1. At the point where the diode is to be produced a window 3 is etched into isolating layer 2, step 1. An essentially thinner isolating layer 4 is applied which is disposed on substrate 1 in window 3, step 2. A metal layer S is applied which covers the entire window 3 with a thin isolating layer 4, step 3. A sufficiently high voltage is introduced in between metal layer S and substrate 1, so that the thin isolating layer 4 breaks down in the area of window 3, step 4. This results in an electric current starting to flow via breakdown point 6 between metal layer 5 and substrate 1. The resultant Joule heat alloys the metal into the n-conductive semiconductor material of substrate 1, producing a Schottky diode at breakdown point 6.

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