Browse Prior Art Database

Integrable FET Device

IP.com Disclosure Number: IPCOM000074237D
Original Publication Date: 1971-Apr-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 2 page(s) / 37K

Publishing Venue

IBM

Related People

Eichenberger, HP: AUTHOR [+2]

Abstract

In this field-effect transistor device, electric current is controlled by controlling the active contact area of either source or drain contact. The channel immediately underneath that contact extends orthogonally to the contact area and is restricted by depletion zones from either side.

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Integrable FET Device

In this field-effect transistor device, electric current is controlled by controlling the active contact area of either source or drain contact. The channel immediately underneath that contact extends orthogonally to the contact area and is restricted by depletion zones from either side.

Drawing A is a cross-section of the device. Semiconductor body 1 has a drain contact 5 and Schottky-type gate contacts 3 and 4 on the upper face. Source contact 2, which is metallized or of high conductivity material, is arranged somewhere on the semiconductor body, either on the same face as gate and drain or opposite, as shown. A channel area 8 exists underneath the drain contact 5 which may be restricted by depletion zones 6 and 7 that are created by appropriate electric charges on gate contacts 3 and 4. Gate contacts 3 and 4 may be used separately or in parallel.

Drawing B is a top view, partly sectional, of the device.

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