Browse Prior Art Database

Read Only Store Memory Element

IP.com Disclosure Number: IPCOM000074244D
Original Publication Date: 1971-Apr-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Brodsky, MH: AUTHOR [+3]

Abstract

Described is a read-only store (ROS) memory element consisting of a series combination of an electrode, diffusant or alloying material, amorphous semiconductor, and a second electrode.

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Read Only Store Memory Element

Described is a read-only store (ROS) memory element consisting of a series combination of an electrode, diffusant or alloying material, amorphous semiconductor, and a second electrode.

Amorphous semiconductors have high resistivities and, therefore, the resistance between the electrodes is high and the memory element is in the "off" state. Upon the application of a sufficiently large current passing between the electrodes, the local temperature is increased to a point where the diffusant or alloying material diffuses into and/or alloys with the amorphous film causing the amorphous semiconductor to crystallize. In the crystalline phase, the resistivity of the silicon is lower and, therefore, the resistance between the electrodes is reduced and the memory element is in the "on" state. In addition, the diffusant or alloying material mixes with the silicon during the crystallization thus allowing additional conductive paths in the "on" state.

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