Browse Prior Art Database

Field Effect Transistor Device

IP.com Disclosure Number: IPCOM000074329D
Original Publication Date: 1971-Apr-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 2 page(s) / 35K

Publishing Venue

IBM

Related People

Gaensslen, FH: AUTHOR [+3]

Abstract

This is a field-effect device, which incorporates a pair of field-effect transistors of complementary type sharing a common channel region.

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Field Effect Transistor Device

This is a field-effect device, which incorporates a pair of field-effect transistors of complementary type sharing a common channel region.

Complementary transistor device 1 is disposed on top of an insulating substrate 2 and consists of p-conductivity type regions 3 and 4 and n-conductivity type regions 5 and 6, all of which are joined to or meet at a common channel region 7. Channel region 7 is made of a semiconductor material which is the same as that utilized for the p- and n-conductivity type regions. An insulating layer 8 of a suitable metal oxide is formed over the channel region 7. Insulating layer 8 is shown partially cut to expose channel region 7 so that the relationship of the p- and n-conductivity type regions relative to channel region 7 is clear.

A gate electrode 9 is formed on top of insulating layer 8 and is coextensive with channel region 7. Electrodes 10 and 11 are connected to p-conductivity regions 3 and 4, respectively, and electrodes 12 and 13 are connected to n- conductivity type regions 5 and 6, respectively.

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