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Decomposition and Alloy Growth of Microstructures

IP.com Disclosure Number: IPCOM000074367D
Original Publication Date: 1971-Apr-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Welber, B: AUTHOR [+2]

Abstract

Very small (1-10mu range) epitaxial structures in substrates of compounds having a volatile component, are prepared by focusing a laser light onto a suitably small area of a substrate, e.g., GaAs, to heat a locally small area thereof. The volatile component, e.g., As in GaAs, vaporizes leaving behind a liquid alloy rich in the other components, e.g., Ga. When the laser is shut down the alloy cools causing epitaxial growth to occur in the alloy region.

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Decomposition and Alloy Growth of Microstructures

Very small (1-10mu range) epitaxial structures in substrates of compounds having a volatile component, are prepared by focusing a laser light onto a suitably small area of a substrate, e.g., GaAs, to heat a locally small area thereof. The volatile component, e.g., As in GaAs, vaporizes leaving behind a liquid alloy rich in the other components, e.g., Ga. When the laser is shut down the alloy cools causing epitaxial growth to occur in the alloy region.

This method could prove extremely practical for monolithic production of such devices as: 1) GaAs narrow width lasers.

2) LED arrays of Ga(1-x) A1(x) As.

3) LED arrays of Gas. using either a fly's eye type of lens or a programmed x-y movement stage. P-N junctions can be fabricated by this method either by suitably doping the substrate with n and F type impurities having different segregation constants, or by introducing volatile impurities via some carrier gas.

An alternative method could be the localized heating of a material which alloys with the substrate material e.g., a In-Au layer on GaAs.

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