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GsInAs Infrared Emission Device

IP.com Disclosure Number: IPCOM000074392D
Original Publication Date: 1971-Apr-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 2 page(s) / 22K

Publishing Venue

IBM

Related People

Shang, DC: AUTHOR

Abstract

This is a process for making a GaInAs light-emitting diode (LED) structure 10 which has a wavelength emission characteristic in the infrared region.

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GsInAs Infrared Emission Device

This is a process for making a GaInAs light-emitting diode (LED) structure 10 which has a wavelength emission characteristic in the infrared region.

First, an N-doped GaAs (ratio 1:1) substrate 11 using Te as the dopant in a concentration of 1 x 10/18/ per cc of GaAs is provided.

Next, a mix containing 5 gms of metallic In, 2 gms of an InAs (ratio 1:1) polycrystal, and an N dopant of .01 gms of Te is provided and melted at a temperature of 870 degrees C.

Next, substrate 11 is immersed in the melt when the temperature of 870 degrees C is reached, and an N-region 12 is epitaxial solution grown on an appropriate surface of substrate 11 by cooling the melt to a temperature of 835 degrees C at a rate of 1/2 degree C per minute.

When the melt reaches the 835 degrees C temperature, a sufficient quantity, e.g. 0.018 gms, of GaAsZn (ratio 0.5:0.5:1) alloy is added to the melt and the temperature is then raised to 840 degrees C. Next, a P-region 12b is diffused inwardly by counter-doping region 12 with the added Zn and cooling at a rate of 1/2 degree C until the melt is at a temperature of 800 degrees C.

When the melt is at 800 degrees C, the structure 10 is removed from the melt and cleaned. The structure 10 now has the N and P-regions 12a and 12b, respectively, and PN junction 12c of the diode formed on the substrate 11. The heating steps of the process are performed in a forming gas atmosphere of 90%N x 10%H.

The diode is particularly use...