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Browse Prior Art Database

Vapor Transport Epitaxial Process

IP.com Disclosure Number: IPCOM000074396D
Original Publication Date: 1971-Apr-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Berkenblit, M: AUTHOR [+3]

Abstract

Zinc oxide has application in surface acoustic wave, dielectric and display devices. The following process provides for the transport and epitaxial growth of zinc oxide on substrates heteroepitaxially.

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This is the abbreviated version, containing approximately 70% of the total text.

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Vapor Transport Epitaxial Process

Zinc oxide has application in surface acoustic wave, dielectric and display devices. The following process provides for the transport and epitaxial growth of zinc oxide on substrates heteroepitaxially.

Using sapphire single crystal substrates, epitaxial zinc oxide is deposited in accordance with the following reactions:

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Experimentally, helium is transpired over a zinc bed at a defined temperature. Simultaneously, helium is transpired over a water source also at a defined temperature. The reactants are then mixed at a reaction site where either growth is permitted to take place on a substrate (temperature of the reaction site is 700 to 1100 degrees C) or, the reaction site is used as the in situ source of zinc oxide (the reverse of reaction (3) above). If the latter approach is used, a temperature gradient is used to enforce a hot-to-cold transport, the substrate being positioned in the colder region. The unique feature is the fact that the reaction can be conducted in a completely inert atmosphere except for hydrogen produced by the reaction. If one were to use the reverse reaction directly, a hydrogen environment would be required. Further, the proposed method is free of reaction with the quartz vessel in which the reaction is carried out.

Other control factors include the ability to independently vary zinc and water concentration and consequently their relative concentrations as well as temperature. Further, whe...