Browse Prior Art Database

Bubble Domain Storage

IP.com Disclosure Number: IPCOM000074400D
Original Publication Date: 1971-Apr-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Fugere, DG: AUTHOR [+2]

Abstract

The drawing illustrates a pattern of conductors and circuits for a bubble domain memory. The circuits and conductors are formed in a semiconductor chip, and a magnetic wafer (not shown) is located to respond to the currents in the conductors for read and write operations.

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Bubble Domain Storage

The drawing illustrates a pattern of conductors and circuits for a bubble domain memory. The circuits and conductors are formed in a semiconductor chip, and a magnetic wafer (not shown) is located to respond to the currents in the conductors for read and write operations.

A word conductor 2 illustrates a number of similar row conductors. A bit- sense conductor having two parts 3 and 4 illustrates a similar bit-sense conductor for each column of the memory. Each word conductor has a word drive circuit 5. Each column has a bit driver 6 and a sense amplifier 7. Circuits 5, 6 and 7 are formed in the semiconductor chip.

A binary storage cell is located at each intersection of a word conductor and a bit-sense conductor. The presence of a bubble domain represents a 1 and the absence of a bubble domain represents a 0. At each storage cell location a loop 8 connects the word conductor 2 to the part 4 of the bit-sense conductor. A diode 9 conductively isolates each loop 8 from the other storage cells. At each storage cell of a column, the part 3 of the bit-sense conductor is formed into a loop 10 located inside loop 8. The word conductor 2 and a portion 12 of loop 8 are underpasses formed in the semiconductor chip. Conductors 3, 4, 8 and 10 are formed of metal on the surface of the chip.

The memory is located from a bubble generator, not shown. A word is read by coincidently energizing the bit drivers and the word driver of the selected word to expand...