Browse Prior Art Database

Detection and Measurement of Epitaxial Spikes

IP.com Disclosure Number: IPCOM000074423D
Original Publication Date: 1971-Apr-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 2 page(s) / 29K

Publishing Venue

IBM

Related People

Sommer, GC: AUTHOR [+2]

Abstract

This apparatus utilizes a conical dark field illuminator to detect and measure epitaxial spike height by scattered light pickup.

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Detection and Measurement of Epitaxial Spikes

This apparatus utilizes a conical dark field illuminator to detect and measure epitaxial spike height by scattered light pickup.

Semiconductor wafer 1 is rotated beneath a microscope including a conical dark field illuminator 2, objective lens 3, diaphragm 4 and photodetector 5. Light reflected from the mirrored illuminator surface 2 is directed at a very low angle to the surface of wafer 1 and on defect-free portions of the wafer presents a dark field to photodetector 5. Epitaxial spikes 6 when presented to the detection area scatter light towards photodetector 5 through objective 3 and diaphragm 4. The intensity of the light scattered, as measured by amplifier 7, is proportional to the height of the spikes detected. By utilizing a conical dark field illuminator rather than a single beam of light, a portion of the light scattered by the spike will always be seen by the photodetector 5. By shifting the relative position of the detector and the wafer, the wafer surface may be completely inspected.

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