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Preventing Surface Inversion Under the Thick Oxide in MOSFET Array Chip

IP.com Disclosure Number: IPCOM000074466D
Original Publication Date: 1971-Apr-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Chang, JJ: AUTHOR [+3]

Abstract

This is a process for preventing surface inversion under the thick oxide in N-channel FET's comprising the steps of stripping the oxide from the semiconductor surface following the source-drain diffusion, reoxidizing the semiconductor surface, forming a layer of acceptor doped oxide on the reoxidized surface, forming an additional oxide layer over the doped oxide layer, opening the gate region through the three oxide layers, and thermally growing the gate oxide and simultaneously diffusing the acceptors out of the doped oxide into the underlying semiconductor body to prevent leakage paths.

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Preventing Surface Inversion Under the Thick Oxide in MOSFET Array Chip

This is a process for preventing surface inversion under the thick oxide in N- channel FET's comprising the steps of stripping the oxide from the semiconductor surface following the source-drain diffusion, reoxidizing the semiconductor surface, forming a layer of acceptor doped oxide on the reoxidized surface, forming an additional oxide layer over the doped oxide layer, opening the gate region through the three oxide layers, and thermally growing the gate oxide and simultaneously diffusing the acceptors out of the doped oxide into the underlying semiconductor body to prevent leakage paths.

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