Browse Prior Art Database

Pinhole Detection in Thermal Silicon Oxides

IP.com Disclosure Number: IPCOM000074509D
Original Publication Date: 1971-May-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Gallinger, LT: AUTHOR [+2]

Abstract

Pinholes in thermal silicon oxides, which may result in electrical shorts in transistor devices, are detected with an acid solution.

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Pinhole Detection in Thermal Silicon Oxides

Pinholes in thermal silicon oxides, which may result in electrical shorts in transistor devices, are detected with an acid solution.

The wafer to be tested is exposed to a solution consisting of 7 parts nitric acid, 1 part acetic acid and 1 part 5:1 buffered hydrofluoric acid (5 parts ammonium fluoride and 1 part hydrofluoric acid) by volume. The solution selectively attacks silicon through pinholes in the oxide producing an observable color change in about 15 seconds.

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