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Al(2)O(3) Protection of Si(3)N(4) During RF Sputter Etching

IP.com Disclosure Number: IPCOM000074527D
Original Publication Date: 1971-May-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 2 page(s) / 35K

Publishing Venue

IBM

Related People

Gardiner, JR: AUTHOR [+3]

Abstract

A film of Al(2)O(3) protects a Si(3)N(4) layer from being attacked during the complete removal of portions of an overlying metal layer by sputter etching.

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Al(2)O(3) Protection of Si(3)N(4) During RF Sputter Etching

A film of Al(2)O(3) protects a Si(3)N(4) layer from being attacked during the complete removal of portions of an overlying metal layer by sputter etching.

Film 1 of pyrolytic Al(2)O(3)is deposited on top of Si(3)N(4)layer 2 on device wafer 3 (View A). Contact holes 5 are then opened in the Al(2)O(3) and Si(3)N(4) layers by the use of a chemical etchant (View B). The metallurgy 4 is then deposited (View C), masked with the desired pattern, and etched by the sputter etching technique (View D).

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