Browse Prior Art Database

Vapor Deposition With Unsaturated Hydrocarbons

IP.com Disclosure Number: IPCOM000074528D
Original Publication Date: 1971-May-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Prabhu, RS: AUTHOR

Abstract

Coatings such as tungsten and silicon carbide are vapor deposited by reducing halides of the material to be deposited with unsaturated hydrocarbons such as ethylene and acetylene.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Vapor Deposition With Unsaturated Hydrocarbons

Coatings such as tungsten and silicon carbide are vapor deposited by reducing halides of the material to be deposited with unsaturated hydrocarbons such as ethylene and acetylene.

Tungsten is deposited on a substrate by placing the substrate in a reaction vessel and heating the substrate with RF heating to a temperature of about 500- 700 degrees C. Tungsten hexafluoride and acetyle are passed into the vessel. The ethylene reduces the tungsten hexa-fluoride at the surface of the substrate to deposit pure tungsten on the substrate. The byproduct of the reaction consists of a non-corrosive fluorocarbon exit gas.

In a similar manner, silicon carbide is deposited on a substrate by passing ethylene and silicon tetrachloride into the reaction vessel containing the RF heated substrate. Silicon carbide is formed by the reaction: SiCl(4) + 2 C(2)H(4) --> SiC + CH(4) + 4HCl.

1