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Improving Resistivity and Thickness Uniformity of Epitaxial Deposits

IP.com Disclosure Number: IPCOM000074710D
Original Publication Date: 1971-May-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 2 page(s) / 42K

Publishing Venue

IBM

Related People

Elijah, LM: AUTHOR

Abstract

An increase in the uniformity of thickness and resistivity of epitaxial deposits on silicon semiconductor wafers is highly desirable, to reduce the adverse effects of excessive variations on module speeds, beta, regional punch through, ineffective isolation, etc.

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Improving Resistivity and Thickness Uniformity of Epitaxial Deposits

An increase in the uniformity of thickness and resistivity of epitaxial deposits on silicon semiconductor wafers is highly desirable, to reduce the adverse effects of excessive variations on module speeds, beta, regional punch through, ineffective isolation, etc.

This is accomplished in a barrel reactor, by introducing fresh gases through evenly-spaced, concentrically-located, inlet ports, at the top and bottom of the reactor, as indicated in the drawing. They thus come equally in contact with all levels, without the graded, deleterious effects of depletion. After most of the deposition is effected, the spent gases are exhausted through intermittently spaced holes in the susceptor(s) and conveyed down the center of the hollow supporting shaft. The depleted gases are thus removed as soon as their maximum effectiveness is spent, they do not unduly degrade or dilute the gas layers surrounding the wafers and their cooling effect is equalized for all levels.

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