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Negative Photoresist System for Use with Aluminum and Aluminum Copper Metallurgies

IP.com Disclosure Number: IPCOM000074719D
Original Publication Date: 1971-Jun-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Miller, RO: AUTHOR [+2]

Abstract

Negative photoresist, such as KTFR* photoresist, more fully described in U. S. Patent 2,852,379, may be modified by increasing the azide sensitizer level in the photoresist as regularly supplied by the manufacturer. This makes the photoresist suitable for use on such substrates as aluminum films doped with copper, as described in Ames et al, IBM J. Res. Develop. 14, 461 (1970). The level of azide sensitizer in the photoresist is adjusted to give a ratio by weight of unsaturation in the photoresist polymer to sensitizer in the range of about 13.5 to 14.5. An optimum resist system should have 14 +/-1 weight percent unsaturation in the polycyclized isoprene polymer and 1 +/-0.1 weight percent of the azide sensitizer. More precise control over photoresist properties is obtained through use of the following quality index (Q.I.

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Negative Photoresist System for Use with Aluminum and Aluminum Copper Metallurgies

Negative photoresist, such as KTFR* photoresist, more fully described in U.
S. Patent 2,852,379, may be modified by increasing the azide sensitizer level in the photoresist as regularly supplied by the manufacturer. This makes the photoresist suitable for use on such substrates as aluminum films doped with copper, as described in Ames et al, IBM J. Res. Develop. 14, 461 (1970). The level of azide sensitizer in the photoresist is adjusted to give a ratio by weight of unsaturation in the photoresist polymer to sensitizer in the range of about 13.5 to
14.5. An optimum resist system should have 14 +/-1 weight percent unsaturation in the polycyclized isoprene polymer and 1 +/-0.1 weight percent of the azide sensitizer. More precise control over photoresist properties is obtained through use of the following quality index (Q.I.):

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The absorbance is measured by infrared spectroscopy and shows the presence of double bonds in the polymer. The above absorbance ratio is, therefore, an indication of the ratio of internal to terminal double bonds in the polymer. Elimination of pattern distortion and reduction of pinholes and etch defects of between 50 and 100 percent is obtained on copper doped aluminum, thermally grown SiO(2), and sputtered SiO(2) surfaces if this quality index is less than about 0.4. * Trademark of Eastman Kodak Company.

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