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Alumina Tungsten Susceptor for Epitaxial Reactors

IP.com Disclosure Number: IPCOM000074754D
Original Publication Date: 1971-Jun-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Beaudouin, PL: AUTHOR [+2]

Abstract

This susceptor has a multilevel ceramic structure in which one or several layers are metallized with a refractory metal.

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Alumina Tungsten Susceptor for Epitaxial Reactors

This susceptor has a multilevel ceramic structure in which one or several layers are metallized with a refractory metal.

Graphite susceptors used for epitaxial disposition are conventionally coated with silicon carbide. This coating may crack and expose the graphite to reactive gases during deposition of Si. This results in a variation of quality of the epitaxial layer which cannot be controlled, since the silicon carbide cracks are unpredictable and it is not known exactly how they effect the quality of the Si layer.

This susceptor is a laminated composite element. It is produced by sandwiching screened on layers of tungsten between ceramic green sheets. The composite part is laminated and then sintered to produce a tungsten susceptor enveloped by alumina ceramic. Like the more conventional graphite susceptor the alumina-tungsten susceptor is heated with RF.

The raw materials for producing the susceptor are comparatively inexpensive. Also, this susceptor is sintered at 1500 degrees C and will, therefore, withstand higher temperatures than the more conventional graphite susceptor known in the art.

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