Browse Prior Art Database

Continuous Magnetic Film Memory

IP.com Disclosure Number: IPCOM000074760D
Original Publication Date: 1971-Jun-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 2 page(s) / 49K

Publishing Venue

IBM

Related People

Kump, HJ: AUTHOR

Abstract

In a continuous magnetic film memory, regions between bit locations are locked into the hard direction so that these regions do not respond to the word pulse during read operations.

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Continuous Magnetic Film Memory

In a continuous magnetic film memory, regions between bit locations are locked into the hard direction so that these regions do not respond to the word pulse during read operations.

The magnetic film 10 is made of NiFe having an angular dispersion greater than 10 degrees,or of NiFeCo having a dispersion substantially lower than 10 degree to obtain the same degree of locking. The film 10 may be wholly locked with, e.g., a Helmholz coil or locked only along word lines 12, 14 by means of the word field produced by currents in word lines 12, 14.

Information stored in film 10 at bit locations defined by the intersections of word lines 12, 14 and sense lines 16, 18 and indicated by magnetization directions 20, 22 is read out in sense lines 16, 18 by applying read pulses from a word driver to a selected word line 12 or 14. Since regions between bit locations are locked magnetically, i.e., they are magnetized in the hard direction, they do not contribute unwanted signals to the sense amplifiers during the read operation.

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