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Browse Prior Art Database

Making Photolithographic Masks

IP.com Disclosure Number: IPCOM000074762D
Original Publication Date: 1971-Jun-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 2 page(s) / 29K

Publishing Venue

IBM

Related People

Harrocks, JA: AUTHOR

Abstract

Photoresist dyed with diazonium compounds may be used to fabricate a glass mask sufficiently transparent to visible radiation to facilitate alignment of the mask. A glass substrate 10 is coated with a layer 12 of either a negative or positive photoresist containing either the diazonium compound or its coupler, as in Fig. A. The photoresist layer 12 is exposed and developed in a conventional manner to produce a desired pattern on substrate 10, as in Fig. B. Finally, the coupler for the diazonium compound included in the photoresist or the diazonium compound for the coupler included in the photoresist is diffused into the resist pattern of layer 12 to produce a dye having maximum absorbance in the wavelength region of 3500 angstroms to 4500 angstroms.

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Making Photolithographic Masks

Photoresist dyed with diazonium compounds may be used to fabricate a glass mask sufficiently transparent to visible radiation to facilitate alignment of the mask. A glass substrate 10 is coated with a layer 12 of either a negative or positive photoresist containing either the diazonium compound or its coupler, as in Fig. A. The photoresist layer 12 is exposed and developed in a conventional manner to produce a desired pattern on substrate 10, as in Fig. B. Finally, the coupler for the diazonium compound included in the photoresist or the diazonium compound for the coupler included in the photoresist is diffused into the resist pattern of layer 12 to produce a dye having maximum absorbance in the wavelength region of 3500 angstroms to 4500 angstroms. A preferred diazonium compound for this purpose is p-diazodiethylaniline boron tetrachloride and a preferred coupler for the diazonium compound is n-benzyl acetoacetamide. If desired, the diazonium compound and its coupler may both be diffused into the resist layer after it has been exposed and developed. The result is a glass mask suitable for exposing photoresist on semiconductor wafers in the fabrication of integrated circuits.

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