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Induced Uniaxial Anisotropy in Garnet Bulk Crystals by a Strain Anneal Treatment

IP.com Disclosure Number: IPCOM000074789D
Original Publication Date: 1971-Jun-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 2 page(s) / 25K

Publishing Venue

IBM

Related People

Giess, EA: AUTHOR [+2]

Abstract

Garnets have cubic anisotropy and must have H(u)uniaxial anisotropy with H(u) > 4piM(s) before they will support stable bubble domains. The following procedure is designed to give bulk garnet crystals the desired H(u) by a strain-anneal treatment.

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Induced Uniaxial Anisotropy in Garnet Bulk Crystals by a Strain Anneal Treatment

Garnets have cubic anisotropy and must have H(u)uniaxial anisotropy with H(u) > 4piM(s) before they will support stable bubble domains. The following procedure is designed to give bulk garnet crystals the desired H(u) by a strain- anneal treatment.

A polished flat garnet crystal 1 is situated between two polished flat MgO crystals 2 or ceramics to plastically deform and ensure uniform loading of the garnet crystal 1. Interspersed between the MgO crystals 2 and the garnet crystal 1 are platinum foils 3. This arrangement is then placed in a furnace 4, with a load 5 situated on the upper MgO crystal. The assembly is heated in a temperature range of 1200 to 1300 degrees C for about 48 hours. The garnet crystal 1 is then cooled under its load 5 at the rate of 1 degrees C per hour to about 950 degrees C then at a fast rate to room temperature. The load 5 should be about 7500 lbs/in/2/.

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