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High Performance High Yield Small Area Transistor

IP.com Disclosure Number: IPCOM000074808D
Original Publication Date: 1971-Jun-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 2 page(s) / 46K

Publishing Venue

IBM

Related People

Feinberg, I: AUTHOR

Abstract

There is shown a technique for fabricating a small, high-frequency, high-yield, transistor. The technique incorporates the principles of multi-source codiffusion and a lateral transistor design. The fabrication is as follows: 1) A base diffusion 8 is made into an-epitaxial region 10 of a substrate wafer, which has the previously diffused sub-collector 11 and collector reach through diffusion 12 to produce the structure shown in Fig. A. 2) An opening in the silicon dioxide layer is made and a mixed arsenic-boron powdered source or other suitable source is used in a capsule diffusion process to diffuse both the emitter 13 and the actual base 14 at the same time, as shown in Fig. B. 3) Contact holes are opened and the device metallized, as shown in Fig. C.

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High Performance High Yield Small Area Transistor

There is shown a technique for fabricating a small, high-frequency, high- yield, transistor. The technique incorporates the principles of multi-source codiffusion and a lateral transistor design. The fabrication is as follows: 1) A base diffusion 8 is made into an-epitaxial region 10 of a substrate wafer, which has the previously diffused sub-collector 11 and collector reach through diffusion 12 to produce the structure shown in Fig. A. 2) An opening in the silicon dioxide layer is made and a mixed arsenic-boron powdered source or other suitable source is used in a capsule diffusion process to diffuse both the emitter 13 and the actual base 14 at the same time, as shown in Fig. B. 3) Contact holes are opened and the device metallized, as shown in Fig. C.

The control of base width and improvement in junction quality result in improved yields since the emitter and base diffusions occur simultaneously. The performance is enhanced by the base width control, steeper emitter gradient obtained with codiffusion and the considerable reduction in collector to base capacitance due to the reduced base area.

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