Browse Prior Art Database

Prevention of Corrosion of Copper by Ion Implantation

IP.com Disclosure Number: IPCOM000074829D
Original Publication Date: 1971-Jun-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Crowder, BL: AUTHOR [+2]

Abstract

Copper stripes used for interconnections and other applications rapidly oxidize and corrode when exposed to air. If very thin stripes, as are used in semiconductor applications, are employed, corrosion means eventual failure of the interconnection. In order to overcome this problem, boron is ion implanted in the surface of the copper. The dose ranges from 10/15/ - 10/16/ ions/cm/2/. Ion implantation occurs at energies from 10 keV - 500 keV. The implantation is performed at room temperature in a vacuum of about 10/-6/ Torr. No annealing is required in the method.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Prevention of Corrosion of Copper by Ion Implantation

Copper stripes used for interconnections and other applications rapidly oxidize and corrode when exposed to air. If very thin stripes, as are used in semiconductor applications, are employed, corrosion means eventual failure of the interconnection. In order to overcome this problem, boron is ion implanted in the surface of the copper. The dose ranges from 10/15/ - 10/16/ ions/cm/2/. Ion implantation occurs at energies from 10 keV - 500 keV. The implantation is performed at room temperature in a vacuum of about 10/-6/ Torr. No annealing is required in the method.

1