Browse Prior Art Database

FET Emitter Follower Cell

IP.com Disclosure Number: IPCOM000074835D
Original Publication Date: 1971-Jun-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Kemerer, DW: AUTHOR

Abstract

By feeding the drain current of active FET devices 10 and 12 to the base of transistors 14 and 16, the stability of the cell is improved by added gain of the additional elements 14 and 16.

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FET Emitter Follower Cell

By feeding the drain current of active FET devices 10 and 12 to the base of transistors 14 and 16, the stability of the cell is improved by added gain of the additional elements 14 and 16.

The load devices 18 and 20 for the cell are standard FET devices and provide a high-impedance load for low-power dissipation. The input/ output devices 22 and 24 are also conventional FET devices, which are turned on and off to address the cell for reading and writing in the usual manner. The emitter-follower configuration, comprising the device 10 and transistor 14 or device 12 and transistor 16, can be fabricated, as illustrated, by placing an additional diffusion 26 in the drain diffusion 28 for device 10 or
12. The source diffusion 30 contains no additional diffusion so that the channel for the device 10 or 12 is formed between the diffusions 28 and 30, while the emitter for transistor 14 or 16 is diffusion 26.

The base for the transistor 14 or 16 is diffusion 28 and the collector for the transistor 14 or 16 is the substrate 32.

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