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Browse Prior Art Database

Schottky Barrier Diode and Method of Making

IP.com Disclosure Number: IPCOM000074855D
Original Publication Date: 1971-Jun-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Anantha, NG: AUTHOR [+3]

Abstract

This Schottky barrier diode is a metal pad incorporating carbon. The latter inhibits the alloying between the metal and the doped semiconductor, thus preventing the metal from achieving an ohmic contact. The Schottky barrier diode is formed at the interface of barrier layer 10 and semiconductor body 12. Layer 10 is deposited over SiO(2) layer 14 and makes contact through aperture 15. Layer 10 has embodied in it carbon in the amounts from 2 to 12%. The chromium-carbon layer is pyrolytically deposited by dicumene chromium or carbonyls of chromium. Other metal-carbon layers can be pyrolytically deposited by carbonyls of molybdenum or tungsten. Overlying metal layer 16 such as Ag, Cu, or Au is then deposited over layer 10, a pattern is etched in it, and solder 18 is deposited to form a solderable terminal.

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Schottky Barrier Diode and Method of Making

This Schottky barrier diode is a metal pad incorporating carbon. The latter inhibits the alloying between the metal and the doped semiconductor, thus preventing the metal from achieving an ohmic contact. The Schottky barrier diode is formed at the interface of barrier layer 10 and semiconductor body 12. Layer 10 is deposited over SiO(2) layer 14 and makes contact through aperture
15. Layer 10 has embodied in it carbon in the amounts from 2 to 12%. The chromium-carbon layer is pyrolytically deposited by dicumene chromium or carbonyls of chromium. Other metal-carbon layers can be pyrolytically deposited by carbonyls of molybdenum or tungsten. Overlying metal layer 16 such as Ag, Cu, or Au is then deposited over layer 10, a pattern is etched in it, and solder 18 is deposited to form a solderable terminal.

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