Browse Prior Art Database

Reducing Electromigration in Aluminum Stripes

IP.com Disclosure Number: IPCOM000074869D
Original Publication Date: 1971-Jun-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Biyal, YA: AUTHOR [+3]

Abstract

The failure, due to electromigration, of aluminum stripes used as conductors on silicon integrated circuit devices, is greatly reduced if certain metals and/or combinations of metals are included in the matrix of aluminum.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Reducing Electromigration in Aluminum Stripes

The failure, due to electromigration, of aluminum stripes used as conductors on silicon integrated circuit devices, is greatly reduced if certain metals and/or combinations of metals are included in the matrix of aluminum.

Among the metals found to reduce the propensity of aluminum based conductor stripes to fail when subjected to high-current densities are preferably copper, as well as magnesium, silver, zirconium, and combinations thereof.

In optimum concentrations, the additives comprise several percent by weight of the total composition of the conductor. However, even very small amounts down to parts per million have a measurable positive effect.

It is theorized that the migration of vacancies under the influence of high- current densities agglomerate at critical points in the conductor and that the additives interact with vacancies, thereby decreasing mobility.

1