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Doped Oxide Device Diffusion Technique

IP.com Disclosure Number: IPCOM000074870D
Original Publication Date: 1971-Jun-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Huang, PC: AUTHOR

Abstract

In this method the doped oxide is deposited before the passivating layer is deposited.

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Doped Oxide Device Diffusion Technique

In this method the doped oxide is deposited before the passivating layer is deposited.

In the conventional technique for making diffusion with a doped oxide layer, a masking passivating layer of SiO(2) or other suitable material is deposited on a wafer, and the areas opened in the layer over the regions in which the diffusions are to be made. Subsequently a doped oxide layer, typically P(2)O(5), is deposited over the entire surface and the wafer-heated. Only the areas in which the doped oxide is in intimate contact with the device become diffused.

In the event that a pin hole or discontinuity occurs in the underlying masking layer, diffusions will occur from the overlying doped layer in undesired areas.

In this method, a doped oxide layer 12 is deposited on device wafer 10. Layer 12 is then removed in all the areas except those areas overlying the regions to be diffused. Subsequently a second overlying passivating layer 14 is deposited over layer 12 and the exposed regions of device 10. A wafer is then heated which results in the formation of diffused regions 16 and 18, as shown in Fig. B.

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