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Base Ring Transistor and Method of Production

IP.com Disclosure Number: IPCOM000074896D
Original Publication Date: 1971-Jun-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 49K

Publishing Venue

IBM

Related People

Berger, H: AUTHOR [+4]

Abstract

This base ring transistor is a transistor structure having favorable diffusion profiles and electrical characteristics. It can be universally operated and be readily integrated and manufactured.

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Base Ring Transistor and Method of Production

This base ring transistor is a transistor structure having favorable diffusion profiles and electrical characteristics. It can be universally operated and be readily integrated and manufactured.

The structure shown in the sectional view comprises p- substrate 1 followed by n- epitaxial layer 2. N+ emitter 3 is buried under n- epitaxial layer 2, from which p base 4 is out-diffused. Base 4 is surrounded by p ring 5 which contacts the former. Ring 5 electrically insulates from the emitter 3 the surrounded part of n- epitaxial layer 2, which forms collector 6.

A flat n+ zone 7 surrounding p ring 5 and an n+ zone, not shown, within collector 6 serve to provide the ohmic contact. The n- collector 6 can also be provided with Schottky contact. P isolation zones 8, 9 complete the structure.

Manufacture proceeds from p- substrate 1 into which n+ emitter 3, p isolation zones 8, and p base region 4 are introduced. During the growth of n- epitaxial layer 2 and the subsequent processes, isolation zone 8, emitter 3 and base region 41 diffuse into epitaxial layer 2. With the dopants being appropriately chosen, diffusion of base region 4' proceeds at a higher speed than that of emitter 3, so obtaining p base 4. finally, p isolation zone 9, ring 5 and n+ zone 7 are introduced into n- epitaxial layer 2, and contacting is carried out.

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