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Browse Prior Art Database

Bistable Resistor and Materials Therefor

IP.com Disclosure Number: IPCOM000074914D
Original Publication Date: 1971-Jun-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 35K

Publishing Venue

IBM

Related People

Ahn, KY: AUTHOR [+2]

Abstract

Bistable switchable resistor 8 is mounted on insulator substrate 10 with base electrode 12 connected to contact electrodes 14 and 16. Intermediate layer 20 is fabricated on a portion of electrode 12. Counter electrode 22 is fabricated on layer 20 and connected to contact electrodes 24 and 26. Voltage monitor 28 for measuring the voltage across resistor 8 is connected to electrodes 16 and 24 via connectors 30 and 32.

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Bistable Resistor and Materials Therefor

Bistable switchable resistor 8 is mounted on insulator substrate 10 with base electrode 12 connected to contact electrodes 14 and 16. Intermediate layer 20 is fabricated on a portion of electrode 12. Counter electrode 22 is fabricated on layer 20 and connected to contact electrodes 24 and 26. Voltage monitor 28 for measuring the voltage across resistor 8 is connected to electrodes 16 and 24 via connectors 30 and 32.

Layer 20 includes a rare earth chalcogenide, e.g., EuO or EuS, doped with either a group VA element, e.g., Bi, or a first row transition element, e.g., Cr. Layer 20 may include a combination of a plurality of different rare earth chalcogenides and the dopant configuration may include a combination of a plurality of the individually suitable dopants.

Since suitably doped rare earth chalcogenides have bistable impedance levels, resistor 8 presents two distinct current-voltage characteristics with different slopes. Transition from the low-resistance state to the high-resistance state or vice-versa occurs when electrode 22 is different rare earth chalcogenides and the dopant configuration may include a combination of a plurality of the individually suitable dopants.

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