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Measuring Breakdown Voltage Distributing of an Array of MOSFET's

IP.com Disclosure Number: IPCOM000075017D
Original Publication Date: 1971-Jul-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 38K

Publishing Venue

IBM

Related People

Osburn, CM: AUTHOR

Abstract

The array of MOSFET's to be tested are contacted with a multiple head probe; a series resistor, Rs is placed in series with each device; the device-resistor pairs are then wired in parallel. Rs is chosen such that Rs is small compared to the resistance of a good MOSFET and is large compared to the resistance of a broken-down MOSFET. An increasing voltage is applied with a variable power supply or with a voltage ramp. The current-voltage characteristics of the MOSFET-resistor array are recorded with an X-Y recorder or other means; at the breakdown voltage VB, the current will make a step increase of VB/Rs. In the final characteristic, each current step corresponds to the breakdown voltage of a device.

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Measuring Breakdown Voltage Distributing of an Array of MOSFET's

The array of MOSFET's to be tested are contacted with a multiple head probe; a series resistor, Rs is placed in series with each device; the device- resistor pairs are then wired in parallel. Rs is chosen such that Rs is small compared to the resistance of a good MOSFET and is large compared to the resistance of a broken-down MOSFET. An increasing voltage is applied with a variable power supply or with a voltage ramp. The current-voltage characteristics of the MOSFET-resistor array are recorded with an X-Y recorder or other means; at the breakdown voltage VB, the current will make a step increase of VB/Rs. In the final characteristic, each current step corresponds to the breakdown voltage of a device. At a given voltage, V, the current is directly related to the total number of devices with breakdown strengths less than or equal to V; thus, a statistical distribution of the breakdown is also obtained.

The feasibility of this testing procedure has been demonstrated using the arrangement shown for the automatic testing of 100 MOS capacitors using an X- Y recorder to measure the current. It is to be noted that the electrical characteristics of MOS capacitors are exemplary of MOSFET's. Using entirely electronic measurements should enable hundreds or thousands of units to be measured at one time. The breakdown voltages V1, V2 --- are given by the points of the current steps on the recorder. This techniqu...