Browse Prior Art Database

Static Shift Register

IP.com Disclosure Number: IPCOM000075092D
Original Publication Date: 1971-Jul-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 35K

Publishing Venue

IBM

Related People

Berger, H: AUTHOR [+2]

Abstract

The static shift register as shown consists of bipolar transistors made up of similar cells. Each cell is formed by two parallel p strips 1 and 2 and an interposed P-region 3. Both P strip 1 and P strip 2 additionally comprise N+ regions forming the transistor collectors. The base of one transistor is coupled with the collector of another by conductive connections 4 and 5, to form a bistable circuit. As several such similar cells are arranged behind each other in a common N-region or substrate, a PNP transistor 6 is obtained between the cells which serves to couple the cells. This shift register is operated in three phases in which pulses A, B, C are applied to the corresponding lines linked with the emitters of the individual cells.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 84% of the total text.

Page 1 of 2

Static Shift Register

The static shift register as shown consists of bipolar transistors made up of similar cells. Each cell is formed by two parallel p strips 1 and 2 and an interposed P-region 3. Both P strip 1 and P strip 2 additionally comprise N+ regions forming the transistor collectors. The base of one transistor is coupled with the collector of another by conductive connections 4 and 5, to form a bistable circuit. As several such similar cells are arranged behind each other in a common N-region or substrate, a PNP transistor 6 is obtained between the cells which serves to couple the cells. This shift register is operated in three phases in which pulses A, B, C are applied to the corresponding lines linked with the emitters of the individual cells. Assuming the first cell is set from the outside to a particular state (0 or 1), one of the NPN transistors is conductive (line with pulse A is conductive, D and C are still nonconductive). the P-region on the 1-side of the cell injects charge carriers (holes) into the neighboring cell which is still nonconductive, but which is subsequently unsymmetrically biased. This causes the cell to be set to the predetermined state when pulse B is applied, that means the information is shifted by one position. The change from pulse 8 to C, etc., is similar. The direction of shift of this shift register can be reversed by not cyclically exchanging pulses A, 8, and C.

If the current amplification of the coupling transistors i...