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Pulse Powered Phase Splitter

IP.com Disclosure Number: IPCOM000075093D
Original Publication Date: 1971-Jul-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 34K

Publishing Venue

IBM

Related People

Berger, H: AUTHOR [+2]

Abstract

The phase splitter consists of transistors T1 and T2. Signal X to be split is applied to the base of T1. Inverted signal X is formed on the collector output of T1 and is fed to the base of T2 via transistor T3. The true signal X is available on the collector output of T2. To reduce power dissipation, base voltage Vb of the transistors is applied as signal X appears. When signal X appears with base voltage Vb on the input, the turn on speed of T1 may not be sufficient to prevent T2 from being turned on immediately. Thus, T2 becomes temporarily conductive, discharging the load capacity on its output. This load capacity must be recharged via collector resistance R after T1 has been finally turned on and T2 had been forcibly turned off.

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Pulse Powered Phase Splitter

The phase splitter consists of transistors T1 and T2. Signal X to be split is applied to the base of T1. Inverted signal X is formed on the collector output of T1 and is fed to the base of T2 via transistor T3. The true signal X is available on the collector output of T2. To reduce power dissipation, base voltage Vb of the transistors is applied as signal X appears. When signal X appears with base voltage Vb on the input, the turn on speed of T1 may not be sufficient to prevent T2 from being turned on immediately. Thus, T2 becomes temporarily conductive, discharging the load capacity on its output. This load capacity must be recharged via collector resistance R after T1 has been finally turned on and T2 had been forcibly turned off. To eliminate this process and the delay it entails, a suitably dimensioned capacity C is connected between the collector of T3 and the reference potential. This capacity prevents T2 from being temporarily turned on upon application of base voltage Vb.

Fig. 2 shows the structure of T3 with the collector capacity C. Epitaxial N- collector zone 2 is grown on a P- substrate 1 with N. subcollector 7. P base zone 4 with N+ emitter zone 5 and N+ collector contact zone 6 are diffused into zone
2. P+ isolation diffusions 3 complete T3. Subcollector 7 extends under isolation diffusions 3. The required collector capacity C is derived from the P+ N+ junctions between these two zones.

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