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Silicon Nitride Films by Direct Nitridation of Silicon Substrates

IP.com Disclosure Number: IPCOM000075166D
Original Publication Date: 1971-Aug-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Brack, K: AUTHOR [+3]

Abstract

Silicon nitride films are formed upon silicon substrate surfaces in accordance with a process which embodies the step of ion bombardment prior to film deposition.

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Silicon Nitride Films by Direct Nitridation of Silicon Substrates

Silicon nitride films are formed upon silicon substrate surfaces in accordance with a process which embodies the step of ion bombardment prior to film deposition.

The method comprises the steps of first bombarding the silicon wafer substrate with ions selected from the group consisting of carbon and nitrogen positive ions of between 1 and 2 megavolts, and subjecting the bombarded surface to a temperature between 900 degrees C-1200 degrees C and a nitrogen flow of about 2 to 3 liters per minute for 1 to 4 hours.

A p-type silicon wafer having 1 ohm centimeter resistivity was bombarded with carbon positive ions between 1 and 2 megavolts. A dose of about 1015 ions per square centimeter was used. This was followed by heating at 1200 degrees C for about 1 hour in a nitrogen flow of 1.5 liters per minute. The silicon nitride film was about 2000 Angstroms thick and uniform.

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