Browse Prior Art Database

Forming Thin Insulating Crystal Layers

IP.com Disclosure Number: IPCOM000075201D
Original Publication Date: 1971-Aug-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Blakeslee, AE: AUTHOR

Abstract

Multilayered semiconductor devices containing isolation layers are provided by thermally decomposing trimethyl gallium, trimethyl aluminum and arsine to form a layer of high resistance Ga(1-x)Al(x)As, (where x is >/- 0.15) on a heated GaAs or Ge substrate. A layer of GaAs or Ge is thereafter grown on the semi-insulating GaAlAs, forming two layers of semiconductor materials electrically insulated from each other.

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Forming Thin Insulating Crystal Layers

Multilayered semiconductor devices containing isolation layers are provided by thermally decomposing trimethyl gallium, trimethyl aluminum and arsine to form a layer of high resistance Ga(1-x)Al(x)As, (where x is >/- 0.15) on a heated GaAs or Ge substrate. A layer of GaAs or Ge is thereafter grown on the semi- insulating GaAlAs, forming two layers of semiconductor materials electrically insulated from each other.

The process is predicated upon the discovery that GaAlAs, which can be vapor grown in thin-single crystals which are lattice matched with GaAs or Ge, has a resistivity of 10/6/ ohm-cm or higher. The process can be used to obtain increased packing density of such devices as logic circuits or light-emitting diode arrays by stacking planar arrays of these devices one upon another, isolated by semi-insulating GaAlAs.

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