Browse Prior Art Database

Eliminating Interference Fringe Patterns in Photoresist Films

IP.com Disclosure Number: IPCOM000075270D
Original Publication Date: 1971-Aug-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Cady, RC: AUTHOR [+2]

Abstract

When positive photoresist material is deposited on silicon wafers by the conventional spin coating process, interference fringe patterns are produced which interfere with the operation of automatic mask alignment equipment. These patterns are caused by ripples in the photoresist film surface of approximately 400 angstroms magnitude.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Eliminating Interference Fringe Patterns in Photoresist Films

When positive photoresist material is deposited on silicon wafers by the conventional spin coating process, interference fringe patterns are produced which interfere with the operation of automatic mask alignment equipment. These patterns are caused by ripples in the photoresist film surface of approximately 400 angstroms magnitude.

The addition of small quantities of dimenthyl silicone liquid to photoresist eliminates these surface ripples, which cause the interference fringe patterns. The dimenthyl silicone fluids when added to a positive photoresist, such as meta- cresol/formaldehyde resin, diazo oxide and plasticizer, in a minimum concentration of 15 PPM totally eliminates the interference fringe by providing ripple-free photoresist surfaces.

1