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Photolithography of 1 Micron Aluminum Lines

IP.com Disclosure Number: IPCOM000075289D
Original Publication Date: 1971-Aug-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Barton, PJ: AUTHOR

Abstract

The following process permits the formation of 1 micron aluminum lines on silicon dioxide in thicknesses of over 5000 Angstroms with good reproducibility: 1) Prebake: Standard 5-minute @ 100 degrees C. 2) Photoresist: AZ 1350, (Product of Shipley Co., Inc.) spun at 2800 rpm (standard). 3) Post Bake: 5 minutes @ 100 degrees C on hotplate rather than oven. 4) Exposure: 2 1/4 seconds at 550 ft candles using Kaspar alignment fixture. 5) Development: 30 sec. in sonic bath using 1:1 AZ developer and D.I. water.

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Photolithography of 1 Micron Aluminum Lines

The following process permits the formation of 1 micron aluminum lines on silicon dioxide in thicknesses of over 5000 Angstroms with good reproducibility:
1) Prebake: Standard 5-minute @ 100 degrees C.
2) Photoresist: AZ 1350, (Product of Shipley Co., Inc.)

spun at 2800 rpm (standard).
3) Post Bake: 5 minutes @ 100 degrees C on hotplate

rather than oven.
4) Exposure: 2 1/4 seconds at 550 ft candles using

Kaspar alignment fixture.
5) Development: 30 sec. in sonic bath using 1:1 AZ

developer and D.I.

water. If all resist is not removed,

an additional 5-second dip in pure AZ

will remove

it without damage to unexposed areas.
6) Rinse: Standard D.I. water until resistivity of

water is 10 megohms.
7) Post Bake: Standard 45 min. at 100 degrees

in drying oven.
8) Post Bake: 15 minutes at 130 degrees C.
9) Etch: Prepare during post bake 30 cc of 6%

aqueous solution

of IGEPAL* to standard p-n etch heated

to 48 degrees C in a sonic bath. Sample

etched in TEFLON**

basket in solic solution for 1 minute.
10) Rinse: D.I. water to greater than 10 megohms.
11) Dry: Blower dry with N2.
12) Examination: Separate, depending on amount of aluminum

left.
13) Rebake: 130 degrees C for 10 minutes.
14) Re-etch: 10 or 15 seconds, depending on amount of

aluminum left.
15) Repeat Steps: 10, 11, 12, 13, and 14, except that etch

should be 10 seconds and

rebake 5 minutes at 130 degrees C.

Approximate total time in etch for 5000

Angstroms is 80 seconds...