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Measuring the Contact Resistance of Metallization on Silicon

IP.com Disclosure Number: IPCOM000075293D
Original Publication Date: 1971-Aug-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 41K

Publishing Venue

IBM

Related People

Dahmen, M: AUTHOR

Abstract

For determining the resistance of the junction layer from a metal layer to a semiconductor layer, e.g. from a vapor-deposited aluminum layer to the silicon layer thereunder, ~n the manufacture of integrated circuits, a concentric arrangement of contacts 1, 2, 3 on semiconducting layer 5 is provided. Central round metal contact 1 is surrounded by ring-shaped metal contact 2, and a constant current I is applied from 4 which collected contact 2. Contact 2 is concentrically surrounded by another metal contact 3. This contact 3 also is ring-shaped. Voltage V measured between contacts 2 and 3 by voltmeter 6 is proportional to the contact resistance between contact 2 and silicon layer S thereunder.

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Measuring the Contact Resistance of Metallization on Silicon

For determining the resistance of the junction layer from a metal layer to a semiconductor layer, e.g. from a vapor-deposited aluminum layer to the silicon layer thereunder, ~n the manufacture of integrated circuits, a concentric arrangement of contacts 1, 2, 3 on semiconducting layer 5 is provided. Central round metal contact 1 is surrounded by ring-shaped metal contact 2, and a constant current I is applied from 4 which collected contact 2. Contact 2 is concentrically surrounded by another metal contact 3. This contact 3 also is ring- shaped. Voltage V measured between contacts 2 and 3 by voltmeter 6 is proportional to the contact resistance between contact 2 and silicon layer S thereunder.

Nonconductive contact 3, with silicon layer 5 placed immediately thereunder, is placed on an equipotential surface of conductive contact 2. Due to the concentric arrangement there is no potential disturbing influence through uncontrollable current paths. Thus, between the upper side of contact 2 and this equipotential surface carrying contact 3 only voltage V drops, which corresponds to the contact resistance. In its effect, the arrangement can be compared to a two-dimensional Faraday cage.

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