Browse Prior Art Database

Power Network for Substrate

IP.com Disclosure Number: IPCOM000075326D
Original Publication Date: 1971-Sep-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 36K

Publishing Venue

IBM

Related People

Auyang, RP: AUTHOR [+3]

Abstract

This power splitting circuit for a driven substrate RF sputtering system has independent controls for the resputtering power and the electrical phase between the cathode and the wafer holder.

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Power Network for Substrate

This power splitting circuit for a driven substrate RF sputtering system has independent controls for the resputtering power and the electrical phase between the cathode and the wafer holder.

RF generator 1 supplies power to cathode 2 and wafer holder electrode 3 which are contained in vacuum chamber 4. Upper matching network 5 includes a coupling capacitor 6 having a magnitude of 50 to 250 pF, which permits continuous adjustment of the power splitting during operation. Wafer holder 3 is driven by a matched 50 ohm transmission cable 7. The lower matching network 8 transforms the input impedance of electrode 3 to a 50 ohm load so that cable 7 functions as a delay line. The electrical phase between the cathode 2 and electrode 3 is adjusted for optimum sputtering condition by selecting the correct cable 7 length. Because the cable is matched, the effect of resputtering is easily monitored by forward and reflected power meters 9 and 10.

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