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Reduction of Thick Oxide Charge Levels

IP.com Disclosure Number: IPCOM000075349D
Original Publication Date: 1971-Sep-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Montillo, FJ: AUTHOR [+2]

Abstract

Oxidation of silicon in steam at high temperatures, in the order of 1000 degrees C., for extended periods of time results in thick silicon dioxide growth necessary for FET device fabrication. Aluminum interconnection lines over these thick oxides can form parasitic FET devices, if diffused source and drain areas are also present in the silicon under these areas. Control of the threshold voltage is of paramount importance. Annealing in nitrogen for periods of 45 minutes or more results in a decrease in flatband voltage to equal to or less than 5 volts, and a tightening of the spread in values from the average. Large thick silicon dioxide charge values thought to contribute to leakage are also controlled by this extended anneal.

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Reduction of Thick Oxide Charge Levels

Oxidation of silicon in steam at high temperatures, in the order of 1000 degrees C., for extended periods of time results in thick silicon dioxide growth necessary for FET device fabrication. Aluminum interconnection lines over these thick oxides can form parasitic FET devices, if diffused source and drain areas are also present in the silicon under these areas. Control of the threshold voltage is of paramount importance. Annealing in nitrogen for periods of 45 minutes or more results in a decrease in flatband voltage to equal to or less than 5 volts, and a tightening of the spread in values from the average. Large thick silicon dioxide charge values thought to contribute to leakage are also controlled by this extended anneal.

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