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Pinhole Detection

IP.com Disclosure Number: IPCOM000075381D
Original Publication Date: 1971-Sep-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Abbas, SA: AUTHOR

Abstract

In an MOS field-effect transistor structure where the metal electrode on top is made extremely thin, the application of voltage between the metal and the substrate can lead, if high enough, to shorting between the metal electrode and substrate. Such a short cannot be sustained long since the metal film is very thin and will self-heal under this voltage. This shorting is accompanied by a burst of light which can easily be observed. The combination of these two phenomena, self-healing and light emission, can be used to evaluate the quality of the oxide in terms of pinholes per unit area. As the voltage is increased one can map the pinholes that exist which are of different dimensions. A camera with a very sensitive photographic film can be used to take pictures of the spots where light is emitted.

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Pinhole Detection

In an MOS field-effect transistor structure where the metal electrode on top is made extremely thin, the application of voltage between the metal and the substrate can lead, if high enough, to shorting between the metal electrode and substrate. Such a short cannot be sustained long since the metal film is very thin and will self-heal under this voltage. This shorting is accompanied by a burst of light which can easily be observed. The combination of these two phenomena, self-healing and light emission, can be used to evaluate the quality of the oxide in terms of pinholes per unit area.

As the voltage is increased one can map the pinholes that exist which are of different dimensions. A camera with a very sensitive photographic film can be used to take pictures of the spots where light is emitted. At each level of voltage one can count the number of bright dots indicating points where breakdown has taken place.

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