Browse Prior Art Database

Potential Well Single Device Charge Amplifier and Inverter

IP.com Disclosure Number: IPCOM000075426D
Original Publication Date: 1971-Sep-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 30K

Publishing Venue

IBM

Related People

Heller, L: AUTHOR [+3]

Abstract

Charge transfer, in semiconductor charge-coupled device arrays, is a degenerative process, thus it is necessary that the charges be regenerated. The device shown in the figure can not only sense and measure the charge, in a charge-coupled device, but will also amplify it and invert it for transfer from one array to another.

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Potential Well Single Device Charge Amplifier and Inverter

Charge transfer, in semiconductor charge-coupled device arrays, is a degenerative process, thus it is necessary that the charges be regenerated. The device shown in the figure can not only sense and measure the charge, in a charge-coupled device, but will also amplify it and invert it for transfer from one array to another.

A body 10 of P-type semiconductor material has thereon an oxide layer 11, a first charge-coupled device array 12, of which only the last electrode 14 is shown, a second charge-coupled device 16, of which only the first electrode 18 is shown, and a charge transfer amplifier and inverter 20. The amplifier 20 comprises two diffusions 22 and 24, contacted by electrodes 26 and 28, respectively, a gate electrode 30 positioned between the diffusions, an input gate electrode 32 positioned between the second diffusion 24 and the first electrode 18 of the second array 16, and an MOS capacitor 40 composed of electrode 34 and diffusion 22.

A power supply 36 biases, through electrode 28, diffusion 24 to a selected positive level. When diffusion 24 is so biased, the gate 30 is raised above threshold causing diffusion 22 to become charged towards the level of diffusion
24. Once diffusion 22 is so charged, gate 30 is dropped below threshold to cut off charge flow between diffusions 22 and 24. Electrode 34 when biased by power supply 38 causes the MOS capacitor 40 to become charged, which raises diffusion 22 to a higher positive value.

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