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Resist Film Removal Method

IP.com Disclosure Number: IPCOM000075434D
Original Publication Date: 1971-Sep-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Reagan, BM: AUTHOR

Abstract

At elevated temperatures, about 200 Degrees C, RISTON* (a dry film photoresist) cures and bonds itself to substrates to the extent that it cannot be removed by ordinary solvents. Such film may be removed by immersion in an ultrasonic bath of concentrated formic acid for about 12-15 minutes. * Trademark of E. I. du Pont de Nemours & Co.

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Resist Film Removal Method

At elevated temperatures, about 200 Degrees C, RISTON* (a dry film photoresist) cures and bonds itself to substrates to the extent that it cannot be removed by ordinary solvents. Such film may be removed by immersion in an ultrasonic bath of concentrated formic acid for about 12-15 minutes. * Trademark of E. I. du Pont de Nemours & Co.

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